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strong ir fet? irfs7730-7ppbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 hexfet ? power mosfet g d s gate drain source application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches ?? dc/dc and ac/dc converters ?? dc/ac inverters benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant v dss 75v r ds(on) typ. 1.70m ?? max 2.00m ?? i d (silicon limited) 269a ? i d (package limited) 240a d s g ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature base part number package type standard pack complete part number form quantity irfs7730-7ppbf d2pak-7pin tube 50 irfs7730-7ppbf tape and reel left 800 irfs7730trl7pp 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package
? irfs7730-7ppbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 269 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 190 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 240 i dm pulsed drain current ?? 990 p d @t c = 25c maximum power dissipation 375 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? symbol parameter max. units e as (thermally limited) single pulse avalanche energy ?? 464 e as (thermally limited) single pulse avalanche energy ?? 897 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.40 c/w? r ? ja junction-to-ambient ? ??? 40 ? mj ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 40 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 1.70 2.00 m ?? v gs = 10v, i d = 100a ? v gs(th) gate threshold voltage 2.1 ??? 3.7 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 75 v, v gs = 0v ??? ??? 150 v ds = 75v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 1.9 ??? ?? ??? 2.20 ??? m ?? v gs = 6.0v, i d = 50a ? notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 240a. note that current limitations aris ing from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 93h, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1575a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 42a, v gs =10v. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.please refer to application note to an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf
? irfs7730-7ppbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 223 ??? ??? s v ds = 10v, i d =100a q g total gate charge ??? 285 428 i d = 100a q gs gate-to-source charge ??? 62 ??? v ds = 38v q gd gate-to-drain charge ??? 86 ??? v gs = 10v q sync total gate charge sync. (qg - qgd) ??? 199 ??? t d(on) turn-on delay time ??? 20 ??? ns v dd = 38v t r rise time ??? 90 ??? i d = 100a t d(off) turn-off delay time ??? 182 ??? r g = 2.7 ?? t f fall time ??? 91 ??? v gs = 10v ? c iss input capacitance ??? 13970 ??? pf ? v gs = 0v c oss output capacitance ??? 1135 ??? v ds = 25v c rss reverse transfer capacitance ??? 720 ??? ? = 1.0mhz c oss eff.(er) effective output capacitance (e nergy related) ??? 1048 ??? v gs = 0v, v ds = 0v to 60v ? c oss eff.(tr) output capacitance (time related) ??? 1283 ??? v gs = 0v, v ds = 0v to 60v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 269 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 990 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ? ??? 11 ??? v/ns t j = 175c,i s =100a,v ds = 75v ? t rr reverse recovery time ??? 42 ??? ns t j = 25c v dd = 64v ??? 49 ??? t j = 125c i f = 100a, q rr reverse recovery charge ??? 63 ??? nc t j = 25c di/dt = 100a/s ??? ??? 88 ??? t j = 125c ? i rrm reverse recovery current ??? 2.4 ??? a t j = 25c ? nc ? d s g
? irfs7730-7ppbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? 0 50 100 150 200 250 300 350 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 100a fig 6. normalized on-resistance vs. temperature 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v
? irfs7730-7ppbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? fig 10. maximum safe operating area -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 75 80 85 90 95 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 11. drain-to-source breakdown voltage -10 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e n e r g y ( j ) fig 12. typical c oss stored energy 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v fig 13. typical on-resista nce vs. drain current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig 9. typical source-drain diode forward voltage 0.1 1 10 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package
? irfs7730-7ppbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 14. maximum effective transient thermal impedance, junction-to-case 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse) fig 15. avalanche current vs. pulse width fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a
? irfs7730-7ppbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 100a v r = 64v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 60a v r = 64v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 500 q r r ( n c ) i f = 100a v r = 64v t j = 25c t j = 125c fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 500 q r r ( n c ) i f = 60a v r = 64v t j = 25c t j = 125c
? irfs7730-7ppbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? irfs7730-7ppbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? d 2 pak-7pin package outline (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? irfs7730-7ppbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? d 2 pak-7pin part marking information d2pak-7pin tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? irfs7730-7ppbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d 2 pak-7pin msl1 rohs compliant yes revision history date comments 11/7/2014 ?? updated e as (l =1mh) = 897mj on page 2 ?? updated note 9 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 42a, v gs =10v? on page 2

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